Global GaN semiconductor device market is anticipated to grow at a significant CAGR of 13.4% during the forecast period (2024-2031). The market growth is attributed to the growing adoption of GaN semiconductor devices in end users such as power & energy, automotive, consumer, and business enterprises driving the market growth. GaN semiconductor devices can operate at higher voltages, temperatures, and switching frequencies with greater efficiencies than existing Si devices. These characteristics not only result in fewer losses but enable significantly reduced system volume, owing to decreased cooling requirements and smaller passive components contributing to overall lower system costs. For instance, in November 2021, GaN Systems invested a $150.0 million growth capital funding round to accelerate innovation and adoption of GaN technology across its automotive, consumer, industrial, and enterprise markets. The penetration of GaN as global power electronics companies shift from legacy silicon devices to unlock the value of small, low-cost, efficient power systems.
Browse the full report description of “GaN Semiconductor Device Market Size, Share & Trends Analysis Report byProduct (GaN Radio Frequency Devices, Opto-semiconductors, and Power Semiconductors), byDevice (Discrete Semiconductor and Integrated Semiconductor), byApplication (Lighting & Lasers, Powers Drives, Supplies & inverters and Radio Frequency (RF)), and by End-Users (Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Industrial & Power, Information & Communication Technology and Others)Forecast Period (2024-2031)” at https://www.omrglobal.com/industry-reports/gan-semiconductor-device-market
The most demanding industries, such as consumer electronics, industrial motors, renewable energy systems, data center servers and power supply, and automotive electronics, are uniquely served by GaN semiconductor devices. The special qualities make it favorable for high-power and high-temperature applications as well as the development of effective optoelectronic devices. For instance, in June 2022, Infineon Technologies Inc., introduced a new higher performance, cost-effective transistor for consumer, industrial, and data center applications. The GS-065-018-2-L expands the company’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating.
The diverse range of GaN semiconductor devices builds advanced components for electronic and optoelectronic applications based on compound or organic semiconductor materials. Such components are used of various innovative applications, technologies, and industries. For instance, in November 2023, Aixtron SE enabled the semiconductor foundry BelGaN to expand its business into the growing GaN market and to accelerate GaN technology innovation. BelGaN relies on AIXTRON’s new G10-GaN, which offers unique performance, an all-new compact design, and overall cost-effectiveness per wafer.
Market Coverage
• The market number available for – 2023-2031
• Base year- 2023
• Forecast period- 2024-2031
• Segment Covered-
o By Product
o By Device
o By Application
o By End-Users
• Regions Covered-
o North America
o Europe
o Asia-Pacific
o Rest of the World
• Competitive Landscape- Infineon Technologies AG, Microchip Technology Inc., Mitsubishi Electric Corp., Northrop Grumman Corp., Taiwan Semiconductor Manufacturing Company Ltd., among others.
Key questions addressed by the report.
Global GaN Semiconductor Device Market Report Segment
By Product
By Device
By Application
By End-Users
Global GaN Semiconductor Device Market Report Segment by Region
North America
• United States
• Canada
Europe
• UK
• Germany
• Italy
• Spain
• France
• Rest of Europe
Asia-Pacific
• China
• India
• Japan
• South Korea
• Rest of Asia-Pacific
Rest of the World
• Latin America
• Middle East & Africa
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