Global high electron mobility transistor market is anticipated to grow at a CAGR of 5.0% during the forecast period (2024-2031). A major factor supporting the market's growth is the growing aerospace and defense application due to the crucial role played by the High Electron Mobility Transistor (HEMTs) in advancing technology within the aerospace & defense industry. HEMTs are perfect for various radar, communication, and electronic warfare systems used in the aerospace and defense industries because of their exceptional performance attributes, which include high frequency, low noise figure, and great power efficiency. HEMTs are integral in developing cutting-edge radar systems, sophisticated electronic warfare systems, and advanced communication equipment, among other vital applications. Demand for new and advanced electronic warfare equipment, satellite communications systems, and radar systems will continue to be driven by shifting geopolitical tensions, modernization initiatives, and better situational awareness and communication needs.
Browse the full report description of “High Electron Mobility Transistor (HEMTs) Market Size, Share & Trends Analysis Report by Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs)) and Other (Indium Phosphide) and by End-User (Aerospace and Defense, Automotive, Consumer Electronics, Industrial, and Others (Medical)) Forecast Period (2024-2031)” at https://www.omrglobal.com/industry-reports/high-electron-mobility-transistor-market
Recent Product Development-
In April 2024, Teledyne e2v HiRel Electronics released the TDGM650LS60, the first product in its new 650V power module family, which utilizes a Teledyne high-voltage Gallium Nitride (GaN) transistor and integrates an isolated driver in one package. Designed to serve as a load switch or solid-state switch, the TDGM650LS60 is claimed to offer unparalleled performance and versatility. With the driver providing 5kV isolation and a GaN transistor with a minimum breakdown voltage of 650V, the module ensures robust and dependable operation in diverse environments. As a result, the TDGM650LS60 is suitable for high-reliability applications, including but not limited to the space, avionics, and military sectors.
In December 2023, Teledyne e2v HiRel Electronics expanded the portfolio of space-screened Gallium Nitride (GaN) HEMTs. Teledyne e2v HiRel has expanded its portfolio by introducing new space-screened versions of its gallium nitride high electron mobility transistors (GaN HEMTS). The additions include 100 V, 90 A, and 650 V, 30 A GaN HEMTs suitable for applications like battery management, DC-DC converters, and space motor drives. These devices offer extended temperature performance, low inductance, and low thermal resistance packaging, catering to critical aerospace and defense power applications.
Market Coverage
• The market number available for – 2023-2031
• Base year- 2023
• Forecast period- 2024-2031
• Segment Covered-
o By Type
o By End-User
• Regions Covered-
o North America
o Europe
o Asia-Pacific
o Rest of the World
• Competitive Landscape- NXP Semiconductors B.V., Sumitomo Electric Group, STMicroelectronics, Toshiba Infrastructure, Mitsubishi Electric Corp, Innoscience, Rohm Co. Ltd., and Texas Instruments, among others.
Key questions addressed by the report.
Global High Electron Mobility Transistor Market Report Segment
By Type
By End-User
Global High Electron Mobility Transistor Market Report Segment by Region
North America
• United States
• Canada
Europe
• UK
• Germany
• Italy
• Spain
• France
• Rest of Europe
Asia-Pacific
• China
• India
• Japan
• South Korea
• Rest of Asia-Pacific
Rest of the World
• Latin America
• Middle East & Africa
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